Hall coefficient and resistivity of amorphous Ti1-xAlx films.
نویسندگان
چکیده
The resistivity of codeposited amorphous Til „Al films has been measured from 1.5 to 300 K over the composition range 0.4~x ~0.92, and the Hall coefficient has been measured at 4 K. The resistivity exhibits a relatively small temperature dependence. The magnitude of the room-temperature resistivity varies appreciably with composition, with a broad maximum around 250 pQ cm near x =0.5. The Hall coefficient is positive at x =0.4 and increases to a maximum at x =0.6. It becomes negative at x =0.85
منابع مشابه
A study on the dependence of DC electrical properties and nanostructure of Cu thin films on film thickness
This paper reports the correlation between film thickness, nanostructure and DC electrical properties of copper thin films deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. Resistivity was measured by four point probe instrument, while a Hall effects measurement system w...
متن کاملA study on the dependence of DC electrical properties and nanostructure of Cu thin films on film thickness
This paper reports the correlation between film thickness, nanostructure and DC electrical properties of copper thin films deposited by PVD method on glass substrate. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for crystallography and morphology investigation, respectively. Resistivity was measured by four point probe instrument, while a Hall effects measurement system w...
متن کاملMagnetic and Electerical Resistivity Behavior of Amorphous Ni Co P Films
Magnetic and Electrical Resistivity Study of Electroless Amorphous Ternary System (Ni-Co-P) show a qualitative dependence of crystalline phases formed during transformation on the annealing temperature and composition. Electrical Resistivity values increases with increase in cobalt content and samples with higher resistivity show lower temperature coefficients. The Initial increase in magnetiza...
متن کاملHall effect and the magnetotransport properties of Co2MnSi1-xAlx Heusler alloys
We have investigated the transport properties of the quaternary Heusler alloys Co2MnSi1-xAlx (0 x 1), which have been theoretically predicted to develop a half-metallic band structure as x ! 0. Resistivity versus temperature measurements as a function of Al concentration (x) revealed a systematic reduction in the residual resistivity ratio as well as a transition from weakly localized to half-m...
متن کاملFabrication of transparent conducting amorphous Zn–Sn–In–O thin films by direct current magnetron sputtering
Amorphous ZnO–SnO2–In2O3 films were grown by direct current magnetron sputtering from vacuum hot pressed ceramic oxide targets of Zn: In:Sn cation ratios 1:2:1 and 1:2:1.5 onto glass substrates. X-ray diffraction analysis showed that the microstructure remained amorphous during annealing at 200 °C for up to 5 hours. By monitoring the electrical resistivity, oxygen content and substrate temperat...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review. B, Condensed matter
دوره 48 10 شماره
صفحات -
تاریخ انتشار 1993